A technology for manufacturing multi-layer Si/CaF2/Si structures and nanostructures that are new prospective materials for micro- and nanoelectronics has been developed.
· CMOS ICs having low power consumption and high operation speed, radiation stability, integration density and reliability have been designed based on technology.
· The use of Si/CaF2 structures made it possible to design new types of sensors of pressure, heat, air and light flows, radioactive radiation, and temperature.
· Si/CaF2/Si-based structures are used in manufacturing microelectronic components and devices.
· Si/CaF2/Si-based nanostructures (superlattices and quantum points) made it possible to create structures having a high luminescence level, which allows the use of these structures in manufacturing highly efficient radiation sources.
· 3D-quantum limitation in semiconductor quantum points results in generating zero-dimensional (0D) states with discrete energy levels. The action of resonance tunneling via zero-dimensional states (single-electron states) makes it possible to design single-electron and quantum computers.